Ion beam induced luminescence in natural diamond

نویسنده

  • P. A. Sullivan
چکیده

We used ion beam induced luminescence (IBIL) to study the evolution of damage during ion implantation of natural type-IIa diamond with 30 keV carbon ions, for different sample temperatures in the range 35-300 K. Blue band-Aluminescence decays with irradiation dose from an initial value of -10e3 photons/e-h pair. This decay was modeled to obtain an effective damage cross section of -40 A2, which is roughly independent of-temperature. We explored the use of IBIL as a tool to characterize the processing of p-n junctions in natural type-IIb diamond and apply it to find conditions that determine the ultraviolet response of light-emitting diodes.

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تاریخ انتشار 1999